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BFR30 - N-channel field-effect transistors

Description

Planar epitaxial symmetrical junction N-channel field-effect transistor in a plastic SOT23 package.

Low level general purpose amplifiers in thick and thin-film circuits.

PINNING - SOT23 PIN 1 2 3 Note 1.

Drain and source are interchangeable.

Features

  • TH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P. O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd. , Energoproject, 15th floor, 51 James Bourchier Blvd.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BFR30; BFR31 N-channel field-effect transistors Product specification Supersedes data of April 1991 File under Discrete Semiconductors, SC07 1997 Dec 05 Philips Semiconductors Product specification N-channel field-effect transistors DESCRIPTION Planar epitaxial symmetrical junction N-channel field-effect transistor in a plastic SOT23 package. APPLICATIONS • Low level general purpose amplifiers in thick and thin-film circuits. PINNING - SOT23 PIN 1 2 3 Note 1. Drain and source are interchangeable. SYMBOL d s g DESCRIPTION drain(1) source(1) gate 1 Top view 2 handbook, halfpage BFR30; BFR31 3 d s g MAM385 Marking codes: BFR30: M1p. BFR31: M2p. Fig.1 Simplified outline and symbol.
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