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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BFR30LT1/D
JFET Amplifiers
N–Channel
2 SOURCE 3 GATE
BFR30LT1 BFR31LT1
3 1
1 DRAIN
2
CASE 318 – 08, STYLE 10 SOT– 23 (TO – 236AB)
MAXIMUM RATINGS
Rating Drain – Source Voltage Gate – Source Voltage Symbol VDS VGS Value 25 25 Unit Vdc Vdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.
BFR31LT1 Datasheet
