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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BFR93ALT1/D
The RF Line
NPN Silicon High-Frequency Transistors
Designed primarily for use in high–gain, low–noise, small–signal UHF and microwave amplifiers constructed with thick and thin–film circuits using surface mount components. • T1 Suffix Indicates Tape and Reel Packaging of 3,000 Units per Reel.
BFR93ALT1
RF TRANSISTORS NPN SILICON
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Maximum Junction Temperature Power Dissipation, Tcase = 75°C (2) Derate linearly above Tcase = 75°C @ Symbol VCEO VCBO VEBO IC TJmax PD(max) Value 12 15 2.0 35 150 0.306 4.
BFR93ALT1 Datasheet
