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A5G38H045N Datasheet Airfast RF Power GaN Transistor

Manufacturer: NXP Semiconductors

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Overview

A5G38H045N Airfast RF Power GaN Transistor Rev.

1 — November 2022 This 5.4 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3400 to 4000 MHz.

This part is characterized and performance is guaranteed for applications operating in the 3400 to 4000 MHz band.

Key Features

  • High terminal impedances for optimal broadband performance.
  • Improved linearized error vector magnitude with next generation signal.
  • Able to withstand extremely high output VSWR and broadband operating conditions.
  • Designed for low complexity linearization systems.
  • Optimized for massive MIMO active antenna systems for 5G base stations Data Sheet: Technical Data A5G38H045N 3400.
  • 4000 MHz, 5.4 W Avg. , 48 V.

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