Datasheet Details
| Part number | A5G23H065N |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 187.01 KB |
| Description | Airfast RF Power GaN Transistor |
| Download | A5G23H065N Download (PDF) |
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| Part number | A5G23H065N |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 187.01 KB |
| Description | Airfast RF Power GaN Transistor |
| Download | A5G23H065N Download (PDF) |
|
|
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A5G23H065N Airfast RF Power GaN Transistor Rev.
1 — November 2022 This 8.8 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz.
This part is characterized and performance is guaranteed for applications operating in the 2300 to 2400 MHz band.
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