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A5G35S004N Datasheet Airfast RF Power GaN Transistor

Manufacturer: NXP Semiconductors

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Overview

A5G35S004N Airfast RF Power GaN Transistor Rev.

4 — November 2022 This RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 4300 MHz.

3500 MHz • Typical Single−Carrier W−CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQ = 12 mA, Pout = 24.5 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1) Frequency Gps (dB) hD Output PAR ACPR (%) (dB) (dBc) 3400 MHz 19.3 19.5 9.9 –38.7 3500 MHz 19.4 20.0 9.7 –40.3 3600 MHz 18.8 20.4 9.4 –42.1 1.

Key Features

  • High terminal impedances for optimal broadband performance.
  • Designed for low complexity linearization systems.
  • Universal broadband driver.
  • Optimized for massive MIMO active antenna systems for 5G base stations Data Sheet: Technical Data A5G35S004N 3300.
  • 4300 MHz, 24.5 dBm Avg. , 48 V.

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