Datasheet Details
| Part number | A3T21H456W23SR6 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 666.05 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 A3T21H456W23SR6 Datasheet
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| Part number | A3T21H456W23SR6 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 666.05 KB |
| Description | N-Channel MOSFET |
| Datasheet |
A3T21H456W23SR6 Datasheet
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NXP Semiconductors Technical Data Document Number: A3T21H456W23S Rev.
1, 08/2018 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz.
2100 MHz Typical Doherty Single--Carrier W--CDMA Performance: VDD = 30 Vdc, IDQA = 800 mA, VGSB = 0.35 Vdc, Pout = 87 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
| Part Number | Description |
|---|---|
| A3T21H360W23SR6 | RF Power LDMOS Transistor |
| A3T09S100N | Airfast RF Power LDMOS Transistor |