Datasheet Details
| Part number | A3T21H360W23SR6 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 395.02 KB |
| Description | RF Power LDMOS Transistor |
| Datasheet |
 A3T21H360W23SR6 Datasheet
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| Part number | A3T21H360W23SR6 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 395.02 KB |
| Description | RF Power LDMOS Transistor |
| Datasheet |
A3T21H360W23SR6 Datasheet
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NXP Semiconductors Technical Data Document Number: A3T21H360W23S Rev.
0, 08/2017 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 56 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz.
2100 MHz Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQA = 600 mA, VGSB = 0.6 Vdc, Pout = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
| Part Number | Description |
|---|---|
| A3T21H456W23SR6 | N-Channel MOSFET |
| A3T09S100N | Airfast RF Power LDMOS Transistor |