A3T09S100N Datasheet Airfast RF Power LDMOS Transistor

Manufacturer: NXP Semiconductors

A3T09S100N airfast rf power ldmos transistor by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	A3T09S100N
Manufacturer	NXP Semiconductors
File Size	421.84 KB
Description	Airfast RF Power LDMOS Transistor
Datasheet	A3T09S100N Datasheet

Overview

A3T09S100N Airfast RF Power LDMOS Transistor Rev.

0 — March 2021 Designed for two--way radio applications with frequencies from 136 to 941 MHz.

The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in radio equipment.

Key Features

Characterized for operation from 136 to 941 MHz.
Unmatched input and output allowing wide frequency range utilization.
Integrated ESD protection.
Wideband.
full power across each mobile radio band.
Exceptional thermal performance.
High linearity for: TETRA, SSB, LTE Typical.

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