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PMK50XP
P-channel TrenchMOS extremely low level FET
Rev. 02 — 28 April 2010 Product data sheet
1. Product profile
1.1 General description
Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low on-state resistance
1.3 Applications
Battery management Load switching
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions 25 °C ≤ Tj ≤ 150 °C Tsp = 25 °C; VGS = -4.
PMK50XP Datasheet
