Datasheet4U Logo Datasheet4U.com

PMK30EP - P-channel TrenchMOS extremely low level FET

Description

Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features

  • Low conduction losses due to low on-state resistance 1.3.

📥 Download Datasheet

Datasheet Details

Part number PMK30EP
Manufacturer NXP Semiconductors
File Size 163.31 KB
Description P-channel TrenchMOS extremely low level FET
Datasheet download datasheet PMK30EP Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMK27XP P-channel extremely low level FET Philips

Other Datasheets by NXP Semiconductors

Part Number Description
PMK35EP P-channel TrenchMOS extremely low level FET
PMK50XP P-channel TrenchMOS extremely low level FET

Full PDF Text Transcription

Click to expand full text
PMK30EP P-channel TrenchMOS extremely low level FET Rev. 04 — 25 October 2010 Product data sheet 1. Product profile 1.1 General description Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance 1.3 Applications „ Battery management „ Load switching 1.4 Quick reference data Table 1.
Published: |