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PMK35EP - P-channel TrenchMOS extremely low level FET

Description

Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features

  • Low conduction losses due to low on-state resistance 1.3.

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Datasheet Details

Part number PMK35EP
Manufacturer NXP Semiconductors
File Size 289.29 KB
Description P-channel TrenchMOS extremely low level FET
Datasheet download datasheet PMK35EP Datasheet

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Full PDF Text Transcription

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PMK35EP P-channel TrenchMOS extremely low level FET Rev. 02 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits  Low conduction losses due to low on-state resistance 1.3 Applications  Battery management  Load switching 1.4 Quick reference data Table 1.
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