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BUK969E3R2-40B - TrenchMOS logic level FET

Download the BUK969E3R2-40B datasheet PDF. This datasheet also covers the BUK959E3R2-40B variant, as both devices belong to the same trenchmos logic level fet family and are provided as variant models within a single manufacturer datasheet.

Description

N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.

Features

  • s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BUK959E3R2-40B-NXPSemiconductors.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BUK969E3R2-40B
Manufacturer NXP Semiconductors
File Size 331.43 KB
Description TrenchMOS logic level FET
Datasheet download datasheet BUK969E3R2-40B Datasheet

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Full PDF Text Transcription

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BUK95/96/9E3R2-40B TrenchMOS™ logic level FET Rev. 04 — 14 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. 1.2 Features s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 1.2 J s ID ≤ 100 A s RDSon = 2.7 mΩ (typ) s Ptot ≤ 300 W. 2.
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