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BLF7G22LS-130
Power LDMOS transistor
Rev. 01 — 2 February 2010
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Product data sheet
1. Product profile
1.1 General description
130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA 1-carrier W-CDMA
[1] [2]
f (MHz) 2110 to 2170 2110 to 2170
IDq (mA) 950 950
VDS (V) 28 28
PL(AV) (W) 30 33
Gp (dB) 18.5 18.5
ηD (%) 32 34
ACPR (dBc) −32[1] −39[2]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.
BLF7G22LS-130 Datasheet
