Datasheet4U Logo Datasheet4U.com

NTE393 - Silicon Complementary Transistors

Download the NTE393 datasheet PDF. This datasheet also covers the NTE392 variant, as both devices belong to the same silicon complementary transistors family and are provided as variant models within a single manufacturer datasheet.

Description

The NTE392 (NPN) and NTE393 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications.

Features

  • D 25A Collector Current D Low Leakage Current: ICEO = 1mA @ VCE = 60V D Excellent DC Gain: hFE = 40 Typ @ 15A D High Current Gain Bandwidth Product: hfe = 3 Min @ IC = 1A, f = 1MHz Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 100V Collector.
  • Base Voltage, VCB.
  • 100V Emitter.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE392_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE393
Manufacturer NTE Electronics (defunct)
File Size 21.18 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE393 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NTE30002 (NTE30002 - NTE30004) Light Emitting Diode NTE Electronics
NTE30003 (NTE30002 - NTE30004) Light Emitting Diode NTE Electronics
NTE30004 (NTE30002 - NTE30004) Light Emitting Diode NTE Electronics
NTE30005 (NTE30005 - NTE30007) Light Emitting Diode NTE Electronics
NTE30006 (NTE30005 - NTE30007) Light Emitting Diode NTE Electronics

Other Datasheets by NTE Electronics (defunct)

Part Number Description
NTE39 Silicon PNP Transistor
NTE390 Silicon Complementary Transistors
NTE391 Silicon Complementary Transistors
NTE392 Silicon Complementary Transistors
NTE394 Silicon NPN Transistor

Full PDF Text Transcription

Click to expand full text
NTE392 (NPN) & NTE393 (PNP) Silicon Complementary Transistors General Purpose Description: The NTE392 (NPN) and NTE393 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications. Features: D 25A Collector Current D Low Leakage Current: ICEO = 1mA @ VCE = 60V D Excellent DC Gain: hFE = 40 Typ @ 15A D High Current Gain Bandwidth Product: hfe = 3 Min @ IC = 1A, f = 1MHz Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter–Base Voltage, VEB . . . . .
Published: |