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NTE391 - Silicon Complementary Transistors

Download the NTE391 datasheet PDF. This datasheet also covers the NTE390 variant, as both devices belong to the same silicon complementary transistors family and are provided as variant models within a single manufacturer datasheet.

Description

The NTE390 (NPN) and NTE391 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications.

Features

  • D 10A Collector Current D Low Leakage Current: ICEO = 0.7mA @ VCE = 60V D Excellent DC Gain: hFE = 40 Typ @ 3A D High Current Gain Bandwidth Product: hfe = 3 Min @ IC = 500mA, f = 1MHz Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 100V Collector.
  • Base Voltage, VCB.
  • 100V Emitter.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE390_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE391
Manufacturer NTE Electronics (defunct)
File Size 21.05 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE391 Datasheet

Full PDF Text Transcription

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NTE390 (NPN) & NTE391 (PNP) Silicon Complementary Transistors General Purpose Description: The NTE390 (NPN) and NTE391 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications. Features: D 10A Collector Current D Low Leakage Current: ICEO = 0.7mA @ VCE = 60V D Excellent DC Gain: hFE = 40 Typ @ 3A D High Current Gain Bandwidth Product: hfe = 3 Min @ IC = 500mA, f = 1MHz Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter–Base Voltage, VEB . . .
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