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NTE390 - Silicon Complementary Transistors

Description

The NTE390 (NPN) and NTE391 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications.

Features

  • D 10A Collector Current D Low Leakage Current: ICEO = 0.7mA @ VCE = 60V D Excellent DC Gain: hFE = 40 Typ @ 3A D High Current Gain Bandwidth Product: hfe = 3 Min @ IC = 500mA, f = 1MHz Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 100V Collector.
  • Base Voltage, VCB.
  • 100V Emitter.

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Datasheet Details

Part number NTE390
Manufacturer NTE Electronics (defunct)
File Size 21.05 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE390 Datasheet

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Other Datasheets by NTE Electronics (defunct)

Part Number Description
NTE39 Silicon PNP Transistor
NTE391 Silicon Complementary Transistors
NTE392 Silicon Complementary Transistors
NTE393 Silicon Complementary Transistors
NTE394 Silicon NPN Transistor

Full PDF Text Transcription

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NTE390 (NPN) & NTE391 (PNP) Silicon Complementary Transistors General Purpose Description: The NTE390 (NPN) and NTE391 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications. Features: D 10A Collector Current D Low Leakage Current: ICEO = 0.7mA @ VCE = 60V D Excellent DC Gain: hFE = 40 Typ @ 3A D High Current Gain Bandwidth Product: hfe = 3 Min @ IC = 500mA, f = 1MHz Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter–Base Voltage, VEB . . .
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