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NTE292 - Silicon Complementary Transistors Medium Power Amp / Switch

Download the NTE292 datasheet PDF (NTE291 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for silicon complementary transistors medium power amp / switch.

Description

The NTE291 (NPN) and NTE292 (PNP) are General Purpose Medium

Power silicon complementary transistors in a TO220 type package designed for switching and amplifier applications.

Features

  • D Low Saturation Voltage Absolute Maximum Ratings: Collector.
  • to.
  • Base Voltage, VCBO.
  • . . 130V Collector.
  • to.
  • Emitter Voltage (RBB = 100Ω, VBB = 0), VCEX.
  • . . . . 130V Collector.
  • to.
  • Emitter Voltage, VCEO.
  • 120V Emitter.
  • To.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE291_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE292
Manufacturer NTE
File Size 24.12 KB
Description Silicon Complementary Transistors Medium Power Amp / Switch
Datasheet download datasheet NTE292 Datasheet

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Full PDF Text Transcription

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NTE291 (NPN) & NTE292 (PNP) Silicon Complementary Transistors Medium Power Amp, Switch Description: The NTE291 (NPN) and NTE292 (PNP) are General–Purpose Medium–Power silicon complementary transistors in a TO220 type package designed for switching and amplifier applications. They are especially designed for series and shunt regulators and as a driver and output stage of high–fidelity amplifiers. Features: D Low Saturation Voltage Absolute Maximum Ratings: Collector–to–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130V Collector–to–Emitter Voltage (RBB = 100Ω, VBB = 0), VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130V Collector–to–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . .
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