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NTE2926 MOSFET N−Ch, Enhancement Mode High Speed Switch TO3PN Type Package
Features: D Good Frequency Characteristic D High Speed Switching D Wide Area of Safe Operation D Enhancement Mode D Good Complementary Characteristics D Equipped with Gate Protection Diodes D Suitable for Audio Power Amplifier
D G
Absolute Maximum Ratings:
S
Drain−Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +15
Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2926 Datasheet
