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NTE2927 - N-Channel MOSFET

Features

  • D Low Drain.
  • Source ON Resistance: RDS(ON) = 0.58 Typ. D High Forward Transfer Admittance: |Yfs| = 6.0 S Typ. D Low Leakage Current: IDSS = 10A Max. (VDS = 600V) D Enhancement.
  • Model: Vth = 2.0V to 4.0V (VDS = 10V, ID = 1mA) G S Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Drain.
  • Source Voltage, VDSS.
  • . 600V Gate.
  • Source Voltage, VGSS.

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Datasheet Details

Part number NTE2927
Manufacturer NTE Electronics (defunct)
File Size 66.96 KB
Description N-Channel MOSFET
Datasheet download datasheet NTE2927 Datasheet

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Full PDF Text Transcription

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NTE2927 MOSFET N−Ch, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package D Features: D Low Drain−Source ON Resistance: RDS(ON) = 0.58 Typ. D High Forward Transfer Admittance: |Yfs| = 6.0 S Typ. D Low Leakage Current: IDSS = 10A Max. (VDS = 600V) D Enhancement−Model: Vth = 2.0V to 4.0V (VDS = 10V, ID = 1mA) G S Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Drain Current (Note DC . . . . . . . . 2), ... I.D. . . . . . . . . . . . . . . . .
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