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NP80N055MLE - N-CHANNEL POWER MOS FET

This page provides the datasheet information for the NP80N055MLE, a member of the NP80N055KLE N-CHANNEL POWER MOS FET family.

Datasheet Summary

Description

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A).
  • Low input capacitance Ciss = 2900 pF TYP.
  • Built-in gate protection diode (TO-262) (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all product.

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Datasheet preview – NP80N055MLE

Datasheet Details

Part number NP80N055MLE
Manufacturer NEC
File Size 245.31 KB
Description N-CHANNEL POWER MOS FET
Datasheet download datasheet NP80N055MLE Datasheet
Additional preview pages of the NP80N055MLE datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055ELE, NP80N055KLE NP80N055CLE, NP80N055DLE, NP80N055MLE, NP80N055NLE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP80N055ELE-E1-AY Note1, 2 NP80N055ELE-E2-AY Note1, 2 NP80N055KLE-E1-AY Note1 NP80N055KLE-E2-AY Note1 NP80N055CLE-S12-AZ Note1, 2 NP80N055DLE-S12-AY Note1, 2 NP80N055MLE-S18-AY Note1 NP80N055NLE-S18-AY Note1 LEAD PLATING Pure Sn (Tin) Sn-Ag-Cu Pure Sn (Tin) PACKING Tape 800 p/reel Tube 50 p/tube Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g TO-263 (MP-25ZK) typ. 1.5 g TO-220 (MP-25) typ. 1.
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