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NP80N055NDG - N-CHANNEL POWER MOS FET

This page provides the datasheet information for the NP80N055NDG, a member of the NP80N055MDG N-CHANNEL POWER MOS FET family.

Datasheet Summary

Description

The NP80N055MDG, NP80N055NDG, and NP80N055PDG are N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Logic level.
  • Super low on-state resistance - NP80N055MDG, NP80N055NDG RDS(on)1 = 6.9 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 11.2 mΩ MAX. (VGS = 4.5 V, ID = 35 A) - NP80N055PDG RDS(on)1 = 6.6 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 10.9 mΩ MAX. (VGS = 4.5 V, ID = 35 A).
  • High current rating ID(DC) = ±80 A.
  • Low input capacitance Ciss = 4600 pF TYP.
  • Designed for automotive.

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Datasheet preview – NP80N055NDG

Datasheet Details

Part number NP80N055NDG
Manufacturer Renesas
File Size 287.04 KB
Description N-CHANNEL POWER MOS FET
Datasheet download datasheet NP80N055NDG Datasheet
Additional preview pages of the NP80N055NDG datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055MDG, NP80N055NDG, NP80N055PDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP80N055MDG, NP80N055NDG, and NP80N055PDG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP80N055MDG-S18-AY Note NP80N055NDG-S18-AY Note NP80N055PDG-E1B-AY Note NP80N055PDG-E2B-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tube 50 p/tube Tape 1000 p/reel Note Pb-free (This product does not contain Pb in the external electrode.) PACKAGE TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g TO-263 (MP-25ZP) typ. 1.5 g FEATURES • Logic level • Super low on-state resistance - NP80N055MDG, NP80N055NDG RDS(on)1 = 6.9 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 11.2 mΩ MAX. (VGS = 4.
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