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NP80N055 - Switching N-Channel Power MOS FET

Datasheet Summary

Description

applications.

Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on)1 = 11 m Ω MAX. (VGS = 10 V, I D = 40 A) RDS(on)2 = 13 m Ω MAX. (VGS = 5 V, I D = 40 A).
  • Low Ciss : Ciss = 2900 pF TYP.
  • Built-in gate protection diode NP80N055ELE (TO-220AB).

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Datasheet Details

Part number NP80N055
Manufacturer NEC Electronics
File Size 110.99 KB
Description Switching N-Channel Power MOS FET
Datasheet download datasheet NP80N055 Datasheet
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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055CLE, NP80N055DLE, NP80N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION These products are N-channel MOS Field Effect www.DataSheet4U.com Transistor designed for high current switching ORDERING INFORMATION PART NUMBER NP80N055CLE NP80N055DLE PACKAGE TO-220AB TO-262 TO-263 applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 m Ω MAX. (VGS = 10 V, I D = 40 A) RDS(on)2 = 13 m Ω MAX. (VGS = 5 V, I D = 40 A) • Low Ciss : Ciss = 2900 pF TYP.
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