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K4080. For precise diagrams, and layout, please refer to the original PDF.
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4080 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4080 is N-channel MOS FET device that features a low on-state resistan...
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4080 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 24 A) • Low QGD: QGD = 6.3 nC TYP. • 4.5 V drive available <R> ORDERING INFORMATION PART NUMBER 2SK4080(1)-S27-AY Note 2SK4080-ZK-E1-AY Note 2SK4080-ZK-E2-AY Note PACKAGE TO-251 (MP-3-b) TO-252 (MP-3ZK) TO-252 (MP-3ZK) Note Pb-free (This product does not contain Pb in external electrode.
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K4080 Datasheet
