Datasheet4U Logo Datasheet4U.com

K4075 - MOS FIELD EFFECT TRANSISTOR

General Description

The 2SK4075 is N-channel MOS FET designed for high current switching applications.

typ.

Key Features

  • Low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 15 A).
  • Low Ciss: Ciss = 2900 pF TYP.
  • Logic level drive type.

📥 Download Datasheet

Full PDF Text Transcription for K4075 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K4075. For precise diagrams, and layout, please refer to the original PDF.

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4075 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applicat...

View more extracted text
4075 is N-channel MOS FET designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING 2SK4075-ZK-E1-AY Pure Sn (Tin) 2SK4075-ZK-E2-AY PACKING Tape 2500 p/reel PACKAGE TO-252 (MP-3ZK) typ. 0.27 g FEATURES • Low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low Ciss: Ciss = 2900 pF TYP.

More Datasheets from NEC (now Renesas Electronics)

Part Number Description
K4070 2SK4070
K4078 2SK4078
K4057 MOS FIELD EFFECT TRANSISTOR
K4058 MOS FIELD EFFECT TRANSISTOR
K4080 MOS FIELD EFFECT TRANSISTOR
K4092 2SK4092