Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K4070. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4070 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a l...
View more extracted text
DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on) = 11 Ω MAX. (VGS = 10 V, ID = 0.5 A) • Low gate charge QG = 5 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 1.0 A) • Gate voltage rating : ±30 V • Avalanche capability ratings <R> ORDERING INFORMATION PART NUMBER LEAD PLATING 2SK4070-S15-AY Note 2SK4070(1)-S27-AY Note 2SK4070-ZK-E1-AY Note 2SK4070-ZK-E2-AY Note Pure Sn (Tin) PACKING Tube 70 p/tube Tube 75 p/tube Tape 2500 p/reel
More Datasheets from NEC (now Renesas Electronics)