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K3116. For precise diagrams, and layout, please refer to the original PDF.
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3116 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3116 is N-channel DMOS FET device that features a low gate charge and ...
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3116 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. ORDERING INFORMATION PART NUMBER 2SK3116 2SK3116-S 2SK3116-ZJ PACKAGE TO-220AB TO-262 TO-263 FEATURES •Low gate charge QG = 26 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V) •Gate voltage rating ±30 V •Low on-state resistance RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.75 A) •Avalanche capability ratings www.DataSheet.co.
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