Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K3115. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3115 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3115 is N-Channel DMOS FET device t...
View more extracted text
INDUSTRIAL USE DESCRIPTION The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 26 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate voltage rating ±30 V • Low on-state resistance RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.
K3115 Datasheet
