K3113 - 2SK3113

NEC (now Renesas Electronics)

General Description

The 2SK3113 is N-channel DMOS FET device that

Key Features

a low gate charge and excellent switching characteristic, and designed for high voltage.

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K3113 2sk3113 by NEC (now Renesas Electronics) - Datasheet Preview

Datasheet Details

Part number	K3113
Manufacturer	NEC (now Renesas Electronics)
File Size	165.59 KB
Description	2SK3113
Datasheet	K3113 Datasheet

Full PDF Text Transcription for K3113 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K3113. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113 is N-channel DMOS FET device that features a ...

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DESCRIPTION The 2SK3113 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter. ORDERING INFORMATION PART NUMBER PACKAGE 2SK3113 TO-251 (MP-3) 2SK3113-Z TO-252 (MP-3Z) FEATURES • Low on-state resistance RDS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A) • Low gate charge QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.

More Datasheets from NEC (now Renesas Electronics)

Part Number	Description
K3114	2SK3114
K3115	SWITCHING N-CHANNEL POWER MOSFET
K3116	2SK3116