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K3056 - 2SK3056

General Description

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Low On-State Resistance RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 16 A).
  • Low Ciss : Ciss = 920 pF TYP.
  • Built-in Gate Protection Diode.

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Full PDF Text Transcription for K3056 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K3056. For precise diagrams, and layout, please refer to the original PDF.

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3056 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3056 2SK3056-S 2SK3056-ZJ PACKAGE TO-2...

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RING INFORMATION PART NUMBER 2SK3056 2SK3056-S 2SK3056-ZJ PACKAGE TO-220AB TO-262 TO-263 DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 16 A) • Low Ciss : Ciss = 920 pF TYP. • Built-in Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (V GS = 0 V) Gate to Source Voltage (V DS = 0 V) Gate to Source Voltage (V DS = 0 V) Drain Current (DC) Drain Current (Pulse) Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse

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