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K3055 - 2SK3055

General Description

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Low On-State Resistance RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 15 A).
  • Low Ciss : Ciss = 920 pF TYP.
  • Built-in Gate Protection Diode.
  • Isolated TO-220 package.

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Full PDF Text Transcription for K3055 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K3055. For precise diagrams, and layout, please refer to the original PDF.

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3055 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3055 PACKAGE Isolated TO-220 DESCRIPTI...

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RING INFORMATION PART NUMBER 2SK3055 PACKAGE Isolated TO-220 DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 15 A) • Low Ciss : Ciss = 920 pF TYP. • Built-in Gate Protection Diode • Isolated TO-220 package ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg Note2 Note2 60 ±20 +20,

More Datasheets from NEC (now Renesas Electronics)

Part Number Description
K3053 2SK3053
K3056 2SK3056
K3057 2SK3057
K3060 N-CHANNEL POWER MOS FET