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K3053 - 2SK3053

General Description

The 2SK3053 is N-Channel MOS Field Effect Transistor designed for high current switching applications in consumer instruments.

Key Features

  • Low On-State Resistance RDS(on)1 = 45 mΩ MAX. (VGS = 10 V, ID = 13 A) RDS(on)2 = 70 mΩ MAX. (VGS = 4.0 V, ID = 13 A).
  • Low Ciss : Ciss = 790 pF TYP.
  • Built-in Gate Protection Diode.
  • Isolated TO-220 package (Isolated TO-220).

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Full PDF Text Transcription for K3053 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K3053. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3053 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3053 is N-Channel MOS Field Effect ...

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INDUSTRIAL USE DESCRIPTION The 2SK3053 is N-Channel MOS Field Effect Transistor designed for high current switching applications in consumer instruments. ORDERING INFORMATION PART NUMBER 2SK3053 PACKAGE Isolated TO-220 FEATURES • Low On-State Resistance RDS(on)1 = 45 mΩ MAX. (VGS = 10 V, ID = 13 A) RDS(on)2 = 70 mΩ MAX. (VGS = 4.0 V, ID = 13 A) • Low Ciss : Ciss = 790 pF TYP.

More Datasheets from NEC (now Renesas Electronics)

Part Number Description
K3055 2SK3055
K3056 2SK3056
K3057 2SK3057
K3060 N-CHANNEL POWER MOS FET