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2SK2365 - N-Channel MOSFET

Description

10.6 MAX.

5.9 MIN.

12.7 MIN.

Features

  • Low On-Resistance 2SK2365: RDS(on) = 0.5 Ω (VGS = 10 V, ID = 5.0 A) 2SK2366: RDS(on) = 0.6 Ω (VGS = 10 V, ID = 5.0 A) 4 1 2 3.
  • Low Ciss Ciss = 1 600 pF TYP.
  • High Avalanche Capability Ratings.
  • Isolate TO-220 Package.

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Datasheet Details

Part number 2SK2365
Manufacturer NEC
File Size 121.38 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK2365 Datasheet

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Other Datasheets by NEC

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2365/2SK2366 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2365, 2SK2365-Z/2SK2366, 2SK2366-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching 3.0 ± 0.3 PACKAGE DIMENSIONS (in millimeters) 10.6 MAX. 3.6 ± 0.2 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. applications. 4.8 MAX. 1.3 ± 0.2 FEATURES • Low On-Resistance 2SK2365: RDS(on) = 0.5 Ω (VGS = 10 V, ID = 5.0 A) 2SK2366: RDS(on) = 0.6 Ω (VGS = 10 V, ID = 5.0 A) 4 1 2 3 • Low Ciss Ciss = 1 600 pF TYP.
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