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2SK2362 - N-Channel MOSFET

Description

The 2SK2361/2SK2362 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

4.7 MAX.

1.5 7.0 1.0±0.2 5.45 4.5±0.2 0.6±0.1 2.8±0.1 1.

Features

  • Low On-Resistance 2SK2361: RDS (on) = 0.9 Ω (VGS = 10 V, ID = 5.0 A) 2SK2362: RDS (on) = 1.0 Ω (VGS = 10 V, ID = 5.0 A) 1.0 15.7 MAX. 4 3.2±0.2.
  • Low Ciss Ciss = 1050 pF TYP.
  • High Avalanche Capability Ratings.

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Datasheet Details

Part number 2SK2362
Manufacturer NEC
File Size 114.99 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK2362 Datasheet

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Other Datasheets by NEC

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2361/2SK2362 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2361/2SK2362 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) 4.7 MAX. 1.5 7.0 1.0±0.2 5.45 4.5±0.2 0.6±0.1 2.8±0.1 1. Gate 2. Drain 3. Source 4. Fin (Drain) FEATURES • Low On-Resistance 2SK2361: RDS (on) = 0.9 Ω (VGS = 10 V, ID = 5.0 A) 2SK2362: RDS (on) = 1.0 Ω (VGS = 10 V, ID = 5.0 A) 1.0 15.7 MAX. 4 3.2±0.2 • Low Ciss Ciss = 1050 pF TYP.
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