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2SK2360 - N-Channel MOSFET

Description

10.6 MAX.

5.9 MIN.

12.7 MIN.

Features

  • Low On-Resistance 2SK2359: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 4.0 A) 2SK2360: RDS(on) = 1.0 Ω (VGS = 10 V, ID = 4.0 A) 4 1 2 3 6.0 MAX.
  • Low Ciss Ciss = 1050 pF TYP.
  • High Avalanche Capability Ratings.

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Datasheet Details

Part number 2SK2360
Manufacturer NEC
File Size 122.21 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK2360 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2359/2SK2360 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2359, 2SK2359-Z/2SK2360, 2SK2360-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching 3.0 ± 0.3 PACKAGE DIMENSIONS (in millimeters) 10.6 MAX. 3.6 ± 0.2 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. applications. 4.8 MAX. 1.3 ± 0.2 FEATURES • Low On-Resistance 2SK2359: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 4.0 A) 2SK2360: RDS(on) = 1.0 Ω (VGS = 10 V, ID = 4.0 A) 4 1 2 3 6.0 MAX. • Low Ciss Ciss = 1050 pF TYP.
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