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NCEP6060GU - N-Channel Super Trench II Power MOSFET

Description

The NCEP6060GU uses Super Trench technology that is General

Features

  • uniquely optimized to provide the most efficient high.
  • VDS =60V,ID =60A frequency switching performance. Both conduction and RDS(ON)=5.6mΩ (typical) @ VGS=10V switching power losses are minimized due to an extremely low.
  • Excellent gate charge x RDS(on) product(FOM) combination of RDS(ON) and Qg. This device is ideal for.
  • Very low on-resistance RDS(on) high-frequency switching and synchronous rectification.
  • 150 °C operating temperature.

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Datasheet Details

Part number NCEP6060GU
Manufacturer NCE Power Semiconductor
File Size 814.45 KB
Description N-Channel Super Trench II Power MOSFET
Datasheet download datasheet NCEP6060GU Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com NCEP6060GU NCE N-Channel Super Trench Power MOSFET Description The NCEP6060GU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high ● VDS =60V,ID =60A frequency switching performance. Both conduction and RDS(ON)=5.6mΩ (typical) @ VGS=10V switching power losses are minimized due to an extremely low ● Excellent gate charge x RDS(on) product(FOM) combination of RDS(ON) and Qg. This device is ideal for ● Very low on-resistance RDS(on) high-frequency switching and synchronous rectification.
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