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NCEP055NH40GU - N-Channel Super Trench III Power MOSFET

Description

The NCEP055NH40GU uses Super Trench III technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =40V,ID =68A RDS(ON)=4.5mΩ (typical) @ VGS=10V RDS(ON)=7.7mΩ (typical) @ VGS=4.5V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating 100% UIS TESTED! 100% ΔVds TESTED! PDFN 5X6-8L Top View Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking P055NH40GU Device NCEP055NH40GU Device Package PDFN5X6-8L Reel Size Ø330mm Tape width 12mm Quantity 5000u.

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Datasheet Details

Part number NCEP055NH40GU
Manufacturer NCE Power Semiconductor
File Size 726.55 KB
Description N-Channel Super Trench III Power MOSFET
Datasheet download datasheet NCEP055NH40GU Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com NCEP055NH40GU NCE N-Channel Super Trench III Power MOSFET Description The NCEP055NH40GU uses Super Trench III technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● DC/DC Converter ●Ideal for high-frequency switching and synchronous rectification General Features ● VDS =40V,ID =68A RDS(ON)=4.5mΩ (typical) @ VGS=10V RDS(ON)=7.7mΩ (typical) @ VGS=4.
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