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NCEP050N10M - N-Channel Super Trench II Power MOSFET

Description

switching performance.

RDS(ON) and Qg.

Features

  • VDS =100V,ID =123A RDS(ON)=4.2mΩ , typical @ VGS=10V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating 100% UIS TESTED! 100% ΔVds TESTED! TO-220-3L Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package NCEP050N10M NCEP050N10M TO-220-3L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter.

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Datasheet Details

Part number NCEP050N10M
Manufacturer NCE Power Semiconductor
File Size 736.64 KB
Description N-Channel Super Trench II Power MOSFET
Datasheet download datasheet NCEP050N10M Datasheet

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Full PDF Text Transcription

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NCEP050N10M NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● DC/DC Converter ●Ideal for high-frequency switching and synchronous rectification General Features ● VDS =100V,ID =123A RDS(ON)=4.
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