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NCE7190H - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The NCE7190H uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 71V,ID =90A RDS(ON) < 6.8mΩ @ VGS=10V (Typ:5.9mΩ).
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation Schematic diagram.

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Datasheet Details

Part number NCE7190H
Manufacturer NCE Power Semiconductor
File Size 334.87 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE7190H Datasheet
Additional preview pages of the NCE7190H datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE7190H NCE N-Channel Enhancement Mode Power MOSFET Description The NCE7190H uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 71V,ID =90A RDS(ON) < 6.8mΩ @ VGS=10V (Typ:5.
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