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NCE7190A - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The NCE7190A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Features

  • VDS =71V,ID =90A RDS(ON) < 5.5 mΩ @ VGS=10V (Typ:4.8mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Special designed for convertors and power controls.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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Datasheet preview – NCE7190A

Datasheet Details

Part number NCE7190A
Manufacturer NCE Power Semiconductor
File Size 334.39 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE7190A Datasheet
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http://www.ncepower.com Pb Free Product NCE7190A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE7190A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =71V,ID =90A RDS(ON) < 5.5 mΩ @ VGS=10V (Typ:4.
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