Datasheet4U Logo Datasheet4U.com

NCE30NP07S - N and P-Channel Enhancement Mode Power MOSFET

Description

The NCE30NP07S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Features

  • N-channel P-channel.
  • N-Channel VDS = 30V,ID =6.5A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 37mΩ @ VGS=4.5V.
  • P-Channel Only Schematic diagram VDS = -30V,ID = -7A RDS(ON) < 32mΩ @ VGS=-10V RDS(ON) < 70mΩ @ VGS=-4.5V Use.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package times Marking and pin assignment gsheng Package Marking and Ordering Information n Device Marking Device Device Package To NCE30NP07S NCE30NP07S SOP-8.

📥 Download Datasheet

Datasheet preview – NCE30NP07S

Datasheet Details

Part number NCE30NP07S
Manufacturer NCE Power Semiconductor
File Size 466.29 KB
Description N and P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE30NP07S Datasheet
Additional preview pages of the NCE30NP07S datasheet.

📁 Similar Datasheet

  • NCE3010S - N-Channel Enhancement Mode Power MOSFET (NCEPOWER)
  • NCE3050K - N-Channel Enhancement Mode Power MOSFET (NCEPOWER)
  • NCE3080K - N-Channel Enhancement Mode Power MOSFET (NCEPOWER)
  • NCE30H21 - N-Channel Enhancement Mode Power MOSFET (NCEPOWER)
  • NCE30P50G - P-Channel Enhancement Mode Power MOSFET (NCEPOWER)
  • NCE3401 - P-Channel Enhancement Mode Power MOSFET (NCEPOWER)
  • NCE3407 - P-Channel Enhancement Mode Power MOSFET (NCEPOWER)
  • NCE3413 - P-Channel MOSFET (VBsemi)
  • NCE3417 - P-Channel 30V MOSFET (VBsemi)
  • NCE0103 - N-Channel 100V MOSFET (VBsemi)
Other Datasheets by NCE Power Semiconductor
  • NCE30NP4030G - N&P-Channel complementary Power MOSFET
  • NCE30ND09S - N-Channel Enhancement Mode Power MOSFET
  • NCE3007S - P-Channel Enhancement Mode Power MOSFET
  • NCE3008M - N-Channel Enhancement Mode Power MOSFET
  • NCE3011E - N-Channel Enhancement Mode Power MOSFET
  • NCE3012S - P-Channel Enhancement Mode Power MOSFET
  • NCE3018AS - N-Channel Enhancement Mode Power MOSFET
  • NCE3020Q - N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
http://www.ncepower.com NCE30NP07S N and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP07S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel ● N-Channel VDS = 30V,ID =6.5A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 37mΩ @ VGS=4.5V ● P-Channel Only Schematic diagram VDS = -30V,ID = -7A RDS(ON) < 32mΩ @ VGS=-10V RDS(ON) < 70mΩ @ VGS=-4.
Published: |