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NCE3020Q - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE3020Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =30V,ID =20A RDS(ON).

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Datasheet Details

Part number NCE3020Q
Manufacturer NCE Power Semiconductor
File Size 354.13 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE3020Q Datasheet

Full PDF Text Transcription (Reference)

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http://www.ncepower.com Pb Free Product NCE3020Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3020Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =20A RDS(ON) <9mΩ @ VGS=10V RDS(ON) <15mΩ @ VGS=4.