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NCE30ND09S - N-Channel Enhancement Mode Power MOSFET

Description

The NCE30ND09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • Schematic diagram.
  • VDS =30V,ID =9A RDS(ON) < 12mΩ @ VGS=10V RDS(ON) < 17mΩ @ VGS=4.5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current Only.

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Datasheet preview – NCE30ND09S

Datasheet Details

Part number NCE30ND09S
Manufacturer NCE Power Semiconductor
File Size 412.41 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE30ND09S Datasheet
Additional preview pages of the NCE30ND09S datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE30ND09S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram ● VDS =30V,ID =9A RDS(ON) < 12mΩ @ VGS=10V RDS(ON) < 17mΩ @ VGS=4.
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