NCE2321 - P-Channel Enhancement Mode Power MOSFET

Description

The NCE2321 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

VDS = -20V,ID = -3.9A RDS(ON).

NCE Power Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	NCE2321
Manufacturer	NCE Power Semiconductor
File Size	250.44 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE2321 Datasheet
Additional preview pages of the NCE2321 datasheet.

📁 Similar Datasheet

NCE2302D - N-Channel 20V MOSFET (VBsemi)
NCE2025I - N-Channel MOSFET (VBsemi)
NCE2025S - N-Channel MOSFET (VBsemi)
NCE20H11 - N-Channel 20V MOSFET (VBsemi)
NCE0103 - N-Channel 100V MOSFET (VBsemi)
NCE0157A2 - N-Channel Power MOSFET (VBsemi)
NCE01H16 - N-Channel MOSFET (VBsemi)
NCE02H10T - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
NCE1520 - N-Channel 150-V MOSFET (VBsemi)
NCE1540KA - N-Channel 150V MOSFET (VBsemi)

Other Datasheets by NCE Power Semiconductor

NCE2321A - P-Channel Enhancement Mode Power MOSFET
NCE2301 - NCE P-Channel Enhancement Mode Power MOSFET
NCE2301A - P-Channel Enhancement Mode Power MOSFET
NCE2301B - P-Channel Enhancement Mode Power MOSFET
NCE2301C - P-Channel Enhancement Mode Power MOSFET
NCE2301D - P-Channel Enhancement Mode Power MOSFET
NCE2301E - P-Channel Enhancement Mode Power MOSFET
NCE2301F - P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text

http://www.ncepower.com Pb Free Product NCE2321 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2321 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -3.9A RDS(ON) <70mΩ @ VGS=-2.5V RDS(ON) < 50mΩ @ VGS=-4.

Published: Jun 2, 2018 |