NCE15G120T - Trench NPT IGBT

Product Overview

NCE Power Semiconductor

Datasheet Details

Part number	NCE15G120T
Manufacturer	NCE Power Semiconductor
File Size	224.09 KB
Description	Trench NPT IGBT
Datasheet	NCE15G120T Datasheet
Additional preview pages of the NCE15G120T datasheet.

Product details

Description

Using advanced Trench NPT technology, NCE’s 1200V IGBTs offers superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness.

Features

z Trench NPT( Non Punch Through) IGBT z High speed switching z Low saturation voltage: VCE(sat)=2.0V@IC=15A z High input impedance.

📁 Similar Datasheet

NCE1520 - N-Channel 150-V MOSFET (VBsemi)
NCE1540KA - N-Channel 150V MOSFET (VBsemi)
NCE1570 - N-Channel 150V MOSFET (VBsemi)
NCE0103 - N-Channel 100V MOSFET (VBsemi)
NCE0157A2 - N-Channel Power MOSFET (VBsemi)
NCE01H16 - N-Channel MOSFET (VBsemi)
NCE02H10T - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
NCE2025I - N-Channel MOSFET (VBsemi)

Other Datasheets by NCE Power Semiconductor

NCE15G120P - Trench NPT IGBT
NCE15G135T - Trench NPT IGBT
NCE15GD120P - Trench NPT IGBT
NCE15GD120T - Trench NPT IGBT
NCE15GD135T - Trench NPT IGBT
NCE1502R - N-Channel Enhancement Mode Power MOSFET

Published: Jun 8, 2015 |