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JAN2N559-3 - PNP Transistor

Download the JAN2N559-3 datasheet PDF. This datasheet also covers the JAN2N559-1 variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (JAN2N559-1-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
JAN2N5038 (JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR Microsemi Corporation
JAN2N5039 (JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR Microsemi Corporation
JAN2N5415 (JAN2N5415 / JAN2N5416) PNP LOW POWER SILICON TRANSISTOR Microsemi Corporation
JAN2N5416 (JAN2N5415 / JAN2N5416) PNP LOW POWER SILICON TRANSISTOR Microsemi Corporation
JAN2N5683 (JAN2N5683 / JAN2N5684) NPN POWER SILICON TRANSISTOR Microsemi Corporation

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
JAN2N559-1 PNP Transistor
JAN2N559-2 PNP Transistor

Full PDF Text Transcription

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·2N554 (GERMANIUM) 2N555 For Specifications, See 2N178 Data. JAN 2N559-1 (GERMANIUM) JAN 2N559-2 JAN 2N559-3* PNP germanium mesa transistors designed for military and industrial high-reliability, high-speed switching applications. CASE 22 (TO-18) Collector connected to case MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Emitter Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range VCES VCB VEB IC IB IE Po Po TJ Tstg 15 15 5.0 50 50 50 150 2.0 300 4.
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