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JAN2N5416 - (JAN2N5415 / JAN2N5416) PNP LOW POWER SILICON TRANSISTOR

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TECHNICAL DATA PNP LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/485 Devices 2N5415 2N5415S 2N5416 2N5416S Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C @ TC = +250C Operating & Storage Temperature Range Symbol VCEO VCBO VEBO IC PT Top, Tstg 2N5415 200 200 2N5416 300 350 Units Vdc Vdc Vdc Adc W W 0 C Unit C/W 6.0 1.0 0.75 10 -65 to +200 Max. 17.5 TO- 5* 2N5415, 2N5416 THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly 4.28 mW/0C for TA > +250C 2) Derate linearly 57.
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