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JAN2N5039 - (JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR

Download the JAN2N5039 datasheet PDF. This datasheet also covers the JAN2N5038 variant, as both devices belong to the same (jan2n5038 / jan2n5039) npn high power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (JAN2N5038_MicrosemiCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Microsemi (Microchip)

Part Number Description
JAN2N5038 (JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR
JAN2N5415 (JAN2N5415 / JAN2N5416) PNP LOW POWER SILICON TRANSISTOR
JAN2N5416 (JAN2N5415 / JAN2N5416) PNP LOW POWER SILICON TRANSISTOR
JAN2N5683 (JAN2N5683 / JAN2N5684) NPN POWER SILICON TRANSISTOR
JAN2N5684 (JAN2N5683 / JAN2N5684) NPN POWER SILICON TRANSISTOR

Full PDF Text Transcription

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TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/439 Devices 2N5038 2N5039 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Temperature Range Symbol VCEO VCBO VEBO IB IC PT Top, Tstg 2N5038 90 150 2N5039 75 125 Units Vdc Vdc Vdc Adc Adc W 0 7.0 5.0 20 140 -65 to +200 Max. 1.25 C THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly 800 mW/0C for TC > +250C 0 Unit C/W TO-3* (TO-204AA) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max.
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