2N2369A
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N2369/D
Switching Transistors
NPN Silicon
COLLECTOR 3
2 BASE
2N2369 2N2369A-
- Motorola Preferred Device
1 EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector
- Emitter Voltage Collector
- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current (10 ms pulse) Collector Current
- Continuous Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO VCES VCBO VEBO IC(Peak)
IC PD
15 40 40 4.5 500 200 0.36 2.06
Vdc Vdc Vdc Vdc m A m A Watt m W/°C
Total Device Dissipation @ TC = 100°C Derate above 100°C
0.68 Watts 6.85 m W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
- 65 to +200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
Rq JA
Thermal Resistance, Junction to...
