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BUL45 - NPN Transistor

Features

  • include:.
  • Improved Efficiency Due to:.
  • Low Base Drive Requirements (High and Flat DC Current Gain hFE).
  • Low Power Losses (On.
  • State and Switching Operations).
  • Fast Switching: tfi = 100 ns (typ) and tsi = 3.2 µs (typ).
  • Fast Switching: @ IC = 2.0 A, IB1 = IB2 = 0.4 A.
  • Full Characterization at 125°C.
  • Tight Parametric Distributions Consistent Lot.
  • to.
  • Lot.
  • BUL45F, Case 221D, is UL Recognized at 3500 VRMS: Fi.

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Datasheet Details

Part number BUL45
Manufacturer Motorola
File Size 392.60 KB
Description NPN Transistor
Datasheet download datasheet BUL45 Datasheet
Additional preview pages of the BUL45 datasheet.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUL45/D Designer's NPN Silicon Power Transistor High Voltage SWITCHMODE ™ Data Sheet BUL45 * BUL45F* *Motorola Preferred Device t Series Designed for use in electronic ballast (light ballast) and in Switchmode Power supplies up to 50 Watts. Main features include: • Improved Efficiency Due to: — Low Base Drive Requirements (High and Flat DC Current Gain hFE) — Low Power Losses (On–State and Switching Operations) — Fast Switching: tfi = 100 ns (typ) and tsi = 3.2 µs (typ) — Fast Switching: @ IC = 2.0 A, IB1 = IB2 = 0.
Published: |